c-649 IRGP450UD2 i nsulated gate bipolar transistor with ultrafast soft recovery diode features ? switching-loss rating includes all "tail" losses ? hexfred tm soft ultrafast diodes ? optimized for high operating frequency (over 5khz) e g n - c h a n n e l c v ces = 500v v ce(sat) 3.2v @v ge = 15v, i c = 33a parameter min. typ. max. units r q jc junction-to-case - igbt ? ? 0.64 r q jc junction-to-case - diode ? ? 0.83 c/w r q cs case-to-sink, flat, greased surface ? 0.24 ? r q ja junction-to-ambient, typical socket mount ? ? 40 wt weight ? 6 (0.21) ? g (oz) thermal resistance description co-packaged igbts are a natural extension of international rectifier's well known igbt line. they provide the convenience of an igbt and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, ups and power supply applications. t o - 2 4 7 a c ultrafast copack igbt preliminary data sheet pd - 9.1065 parameter max. units v ces collector-to-emitter voltage 500 v i c @ t c = 25c continuous collector current 59 i c @ t c = 100c continuous collector current 33 i cm pulsed collector current 120 a i lm clamped inductive load current 120 i f @ t c = 100c diode continuous forward current 29 i fm diode maximum forward current 120 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 200 w p d @ t c = 100c maximum power dissipation 78 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) absolute maximum ratings revision 1
c-650 parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 120 180 i c = 33a q ge gate - emitter charge (turn-on) ? 22 33 nc v cc = 400v q gc gate - collector charge (turn-on) ? 41 62 t d(on) turn-on delay time ? 33 ? t j = 25c t r rise time ? 26 ? ns i c = 33a, v cc = 400v t d(off) turn-off delay time ? 110 170 v ge = 15v, r g = 5.0 w t f fall time ? 91 140 energy losses include "tail" and e on turn-on switching loss ? 0.91 ? diode reverse recovery. e off turn-off switching loss ? 0.25 ? mj e ts total switching loss ? 1.2 1.7 t d(on) turn-on delay time ? 37 ? t j = 150c, t r rise time ? 29 ? ns i c = 33a, v cc = 400v t d(off) turn-off delay time ? 160 ? v ge = 15v, r g = 5.0 w t f fall time ? 110 ? energy losses include "tail" and e ts total switching loss ? 1.8 ? mj diode reverse recovery. l e internal emitter inductance ? 13 ? nh measured 5mm from package c ies input capacitance ? 2700 ? v ge = 0v c oes output capacitance ? 280 ? pf v cc = 30v c res reverse transfer capacitance ? 34 ? ? = 1.0mhz t rr diode reverse recovery time ? 50 75 ns t j = 25c ? 105 160 t j = 125c i f = 25a i rr diode peak reverse recovery current ? 4.5 10 a t j = 25c ? 8.0 15 t j = 125c v r = 200v q rr diode reverse recovery charge ? 112 375 nc t j = 25c ? 420 1200 t j = 125c di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery ? 250 ? a/s t j = 25c during t b ? 160 ? t j = 125c parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 500 ? ? v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage ? 0.41 ? v/c v ge = 0v , i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ? 2.1 3.2 i c = 33a v ge = 15v ? 2.6 ? v i c = 59a ? 2.1 ? i c = 33a, t j = 150c v ge(th) gate threshold voltage 3.0 ? 5.5 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage ? -10 ? mv/c v ce = v ge , i c = 250a g fe forward transconductance 7.0 22 ? s v ce = 100v, i c = 33a i ces zero gate voltage collector current ? ? 250 a v ge = 0v, v ce = 500v ? ? 6500 v ge = 0v, v ce = 500v, t j = 150c v fm diode forward voltage drop ? 1.3 1.7 v i c = 25a ? 1.2 1.5 i c = 25a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v IRGP450UD2 switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified) notes: pulse width 80s; duty factor 0.1%. repetitive rating; v ge =20v, pulse width limited by max. junction temperature. ( see fig. 20 ) v cc =80%(v ces ), v ge =20v, l=10h, r g = 5.0 w , ( see fig. 19 ) pulse width 5.0s, single shot. refer to section d - page d-13 for package outline 3 - jedec outline to-247ac
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